Izitini ze-silicon carbide zine-thermal conductivity cishe engu-120–170 W/(m·K), inani elidlula kude lelo lezinto eziningi zensimbi -ezingezona zensimbi. Lokhu kuhanjiswa okuphezulu kwe-thermal kubangelwa ngokuyinhloko isakhiwo sekristalu esiyingqayizivele se-silicon carbide, esiza ukusakazeka kokushisa okusheshayo nge-crystal lattice.
Uhlolojikelele lwe-Thermal Conductivity ku-Silicon Carbide Bricks
Njengento ephezulu-esebenza nge-ceramic, i-thermal conductivity yezitini ze-silicon carbide kuyinkomba eyinhloko yokushisa kwazo{1}}zokudlulisa. I-thermal conductivity ephakeme ibonisa umthamo omkhulu wokudlulisa ukushisa. Izitini ze-silicon carbide zibonisa amanani e-thermal conductivity ephakeme kakhulu kunalawo ezinto ezivamile ze-refractory nama-abrasives (njenge-corundum), okuholela ekushiseni okuhle kakhulu{4}}okudluliswa kokusebenza ezindaweni{5}}zezinga lokushisa eliphezulu.
Izici Ezithonya Ukuqhutshwa Kwe-Thermal
- Izinga lokushisa: I-thermal conductivity yezitini ze-silicon carbide ikhuphuka ngokukhuphuka kwezinga lokushisa. Nakuba okokusebenza kubonisa ukusebenza kahle kwe-thermal kumazinga okushisa egumbi, ukusebenza kwawo kuhluke nakakhulu-ezimweni zezinga lokushisa eliphezulu.
- I-Crystal Structure: Amakristalu e-Silicon carbide akhiwe ngama-athomu ekhabhoni ne-silicon ahlelwe ngendlela ehlukile-eyicubic lattice enobukhulu obuthathu. Lesi sakhiwo sibonisa ukuhlelwa kwe-athomu ehlelwe kakhulu, okuthuthukisa ukusebenza kahle kokuqhutshwa kokushisa. Ukwengeza, i-silicon carbide ikhona ngamafomu amabili e-crystalline{3}}i-SiC kanye -ne-SiC{{5}ne--i-SiC ebonisa ukuqhutshwa kwe-thermal okuphezulu kune--SiC.
- I-Crystal Purity: Izitini{0}}ezihlanzekile ze-silicon carbide zibonisa ukusebenza kahle okuphezulu kwe-thermal. Ukuba khona kokungcola kushintsha isakhiwo se-elekthronikhi ngaphakathi kwamakristalu e-silicon carbide, ngaleyo ndlela kunciphisa ukuqhutshwa kokushisa. Ngakho-ke, ukukhulisa ukuhlanzeka kwezitini ngesikhathi sokukhiqiza kubalulekile ukuze kuthuthukiswe ukuguquguquka kwazo okushisayo.
- Izindlela Zokuqhuba Ukushisa: Ukushisa kokushisa ngaphakathi kwezitini ze-silicon carbide kwenzeka ngokuyinhloko nge-lattice conduction kanye ne-electronic conduction. I-Lattice conduction idlala indima enkulu, ngokudlidliza kwe-phonon okusebenza njengendlela eyinhloko yokudlulisa ukushisa.
Izindawo Zokufaka Isicelo
Ngenxa yezindawo zazo ezinhle kakhulu-okuhlanganisa ukuguquguquka kwe-thermal ephezulu, i-coefficient ephansi yokunwetshwa kwe-thermal, kanye nokuzinza okuphezulu kokushisa{1}}izitini ze-silicon carbide zisetshenziswa kakhulu emikhakheni efana{2}}nobuchwepheshe obuphezulu bezinga lokushisa, i-optoelectronics, imboni yamakhemikhali, nobuchwepheshe benjini ye-rocket. Isibonelo, emkhakheni wezinto zikagesi-ezisezingeni eliphezulu, izitini ze-silicon carbide zisebenza njengezinto zokuqeda ukushisa kumadivayisi kagesi, okuqinisekisa ukusebenza kwazo okufanele{5}}ezindaweni zokushisa eziphezulu; kuma-optoelectronics, asetshenziswa njengezinto zokuphatha ezishisayo kumalaser{6}amandla aphezulu, ngaleyo ndlela athuthukise ukusebenza kahle kanye nokwelula impilo yesevisi.